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1

An analytical model of the breakdown voltage and minimum epi layer length for RESURF pn diodes

Seung-Youp Han, Jong-Min Na, Yearn-Ik Choi, Jin-Cheol Shin, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 180 KB

english, 1996

2

Optimum design for minimum on-resistance of low voltage trench power MOSFET

Ji-Hoon Hong, Sang-Koo Chung, Yearn-Ik Choi

Journal:

Microelectronics Journal

Year:

2004

Language:

english

File:

PDF, 246 KB

english, 2004

3

Numerical analysis of a new vertical IGBT structure with reduced JFET effect

Chong-Man Yun, Doo-Young Kim, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 439 KB

english, 1996

4

[IEEE 23rd International Conference on Microelectronics (MIEL 2002) - Nis, Yugoslavia (12-15 May 2002)] 2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595) - Improved trench MOS barrier Schottky (TMBS) rectifier

Jin-Woo Moon,, Yearn-IK Choi,, Sang-Koo Chung,

Year:

2002

Language:

english

File:

PDF, 306 KB

english, 2002

5

An analytic solution for breakdown voltage of cylindrical junctions including the interface charge

Kyoung Yang, Il-Jung Kim, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 185 KB

english, 1995

6

Closed-form analytical expressions for the breakdown voltage of GaAs parallel-plane p+n junction in 〈100〉, 〈110〉 and 〈111〉 orientations

Yong-Sung Chung, Seung-Youp Han, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

1996

Language:

english

File:

PDF, 177 KB

english, 1996

7

Effect of aspect ratio on forward voltage drop in trench insulated gate bipolar transistor

Jin-Woo Moon, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 375 KB

english, 2005

8

Cascading structure of LDMOS and LIGBT for increasing the forward biased safe operating area

Seung-Chul Lee, Jae-Keun Oh, Soo-Sung Kim, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 142 KB

english, 2002

9

Linearly-graded surface-doped SOI LDMOSFET with recessed source

Hyoung-Woo Kim, Yearn-ik Choi, Sang-Koo Chung

Journal:

Microelectronic Engineering

Year:

2000

Language:

english

File:

PDF, 1.15 MB

english, 2000

10

Analytical expressions for the three-dimensional effect on the breakdown voltages of planar junctions in nonpunchthrough and punchthrough cases

Il-Jung Kim, Seong-Dong Kim, Yearn-Ik Choi, Min-Koo Han

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 489 KB

english, 1994

11

Analysis of dual-gate LIGBT with gradual hole injection

You-Sang Lee, Byeong-Hoon Lee, Won-Oh Lee, Man-Koo Han, Yearn-Ik Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 142 KB

english, 2001

12

A new gradual hole injection dual-gate LIGBT

Byeong-Hoon Lee,, Jung-Hoon Chun,, Seong-Dong Kim,, Dae-Seok Byeon,, Won-Oh lee,, Min-Koo Han,, Yearn-Ik Choi,

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 41 KB

english, 1998

13

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - A fast-switching SOI SA-LIGBT without NDR region

Jung-Hoon Chul,, Dae-Seok Byeon,, Jae-Keun Oh,, Min-Koo Han,, Yearn-Ik Choi,

Year:

2000

Language:

english

File:

PDF, 302 KB

english, 2000

14

CB-BRT: a new base resistance-controlled thyristor employing a self-aligned corrugated p-base

Dae-Seok Byeon,, Byeong-Hoon Lee,, Doo-Young Kim,, Min-Koo Han,, Yearn-Ik Choi,

Journal:

IEEE Electron Device Letters

Year:

1998

Language:

english

File:

PDF, 61 KB

english, 1998

15

[IEEE IEEE International Symposium on Power Semiconductor Devices and Integrated Circuits - Cambridge, UK (14-17 April 2003)] ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. - A new 600V PT-IGBT for the improved avalanche energy by employing the floating p-well

Soo-Seong Kim,, Chong-Man Yun,, Yearn-Ik Choi,, Min-Koo Han,

Year:

2003

Language:

english

File:

PDF, 285 KB

english, 2003

16

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - A low loss Schottky diodes with a linearly graded doping profile using ion-implantation and out-diffusion from substrate

Sung-Lyong Kim,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 195 KB

english, 1999

17

An accurate on-resistance model for low voltage VDMOS devices

Seong-Dong Kim, Il-Jung Kim, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 422 KB

english, 1995

18

Calculation of avalanche breakdown voltage of the InP P+-N junction

Tae-Hun Moon, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 92 KB

english, 1994

19

A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base

In-Hwan Ji, Byung-Chul Jeon, Young-Hwan Choi, Yearn-Ik Choi, Min-Koo Han

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 357 KB

english, 2006

20

The breakdown voltage of negative curvatured p+n diodes using a SOI layer

Dae-Seok Byeon, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 217 KB

english, 1997

21

Optimum design of the field plate in the cylindrical p+n junction: analytical approach

Kyoung Yang, Dae-Seok Byeon, Min-Koo Han, Yearn-Ik Choi

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 297 KB

english, 1998

22

On the surface electric field of junction diodes with a tapered window

Yearn-Ik Choi, Wilson Kwan

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 221 KB

english, 1987

23

A new protection circuit for high-voltage current saturation of LEST

Byung-Chul Jeon, In-Hwan Ji, Young-Hwan Choi, Soo-Seong Kim, Yearn-Ik Choi, Min-Koo Han

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 159 KB

english, 2005

24

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - The experimental study on the temperature characteristics of the BRT and the EST

Byung-Chul Jeon,, Dae-Seok Byeon,, Jae-Keun Oh,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 225 KB

english, 1999

25

A new junction termination method employing shallow trenches filled with oxide

Jae-Keun Oh, Min-Woo Ha, Min-Koo Han, Yearn-Ik Choi

Journal:

IEEE Electron Device Letters

Year:

2004

Language:

english

File:

PDF, 163 KB

english, 2004

26

Temperature dependent effective ionization coefficient for Si

Yong-Sung Chung, Il-Yong Park, Yearn-Ik Choi, Sang-Koo Chung

Journal:

Microelectronic Engineering

Year:

2000

Language:

english

File:

PDF, 154 KB

english, 2000

27

In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance

Moo-Sup Lim, Cheol-Min Park, Min-Koo Han, Yearn-Ik Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2001

Language:

english

File:

PDF, 105 KB

english, 2001

28

Enhancement of breakdown voltages of Schottky diodes with a tapered window

Journal:

IEEE Transactions on Electron Devices

Year:

1981

Language:

english

File:

PDF, 293 KB

english, 1981

29

Graded etching of thermal oxide with various angles using silicafilm

Yearn-ik Choi, Young-se Kwon, Choong-ki Kim

Journal:

IEEE Electron Device Letters

Year:

1980

Language:

english

File:

PDF, 265 KB

english, 1980

30

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A lateral SOI BMFET with high current gain

Seong-Dong Kim,, Dae-Seok Byeon,, Kyoung Yang,, Oh-Kyong Kwon,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1995

Language:

english

File:

PDF, 475 KB

english, 1995

31

Breakdown voltage enhancement of the p-n junction by self-aligned double diffusion process through a tapered SiO2 implant mask

Han-Soo Kim,, Seong-Dong Kim,, Min-Koo Han,, Seok-Nam Yoon,, Yearn-Ik Choi,

Journal:

IEEE Electron Device Letters

Year:

1995

Language:

english

File:

PDF, 253 KB

english, 1995

32

[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - A new base resistance controlled thyristor employing trench gate and self-align corrugated p-base

Jae-Keun Oh,, Moo-Sup Lim,, Byoung-Chul Jeon,, Min-Koo Han,, Yearn-Ik Choi,

Year:

2001

Language:

english

File:

PDF, 332 KB

english, 2001

33

An analytical model for minimum drift region length of SOI RESURF diodes

Sang-Koo Chung,, Seung-Youp Han,, Jin-Cheol Shin,, Yearn-Ik Choi,, Sang-Bae Kim,

Journal:

IEEE Electron Device Letters

Year:

1996

Language:

english

File:

PDF, 284 KB

english, 1996

34

[IEEE 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD '99 - Toronto, Ont., Canada (26-28 May 1999)] 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312) - The maximum controllable current of improved base resistance controlled thyristor employing a self-aligned corrugated p-base

Dae-Seok Byeon,, You-Sang Lee,, Won-Oh Lee,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 304 KB

english, 1999

35

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A self-aligned latch-free IGBT with sidewall diffused n/sup +/ emitter

Chong-Man Yun,, Doo-Young Kim,, Byung-Hoon Lee,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1995

Language:

english

File:

PDF, 482 KB

english, 1995

36

A new power MOSFET with self current limiting capability†

YUN, CHONG-MAN, HAN, MIN-KOO, CHOI, YEARN-IK

Journal:

International Journal of Electronics

Year:

1996

Language:

english

File:

PDF, 425 KB

english, 1996

37

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - A lightly doped shallow junction extension for the high breakdown voltage by double diffusion process using the taper SiO/sub 2/ mask

Han-Soo Kim,, Seong-Dong Kim,, Min-Koo Han,, Seok-Nam Yoon,, Won-Oh Lee,, Yearn-Ik Choi,

Year:

1995

Language:

english

File:

PDF, 383 KB

english, 1995

38

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - Analytical expression for the breakdown voltage of the gated diodes

Sang-Bok Yun,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 169 KB

english, 1999

39

[IEEE International Electron Devices Meeting. Technical Digest - San Francisco, CA, USA (8-11 Dec. 1996)] International Electron Devices Meeting. Technical Digest - A novel lateral field emitter triode with insitu vacuum encapsulation

Cheol-Min Park,, Moo-Sup Lim,, Byung-Hyuk Min,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1996

Language:

english

File:

PDF, 687 KB

english, 1996

40

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - A low on-resistance SOI LDMOS using a recessed source and a trench drain

Sung-Lyong Kim,, Hoie-Yoon Yang,, Yearn-Ik Choi,

Year:

1999

Language:

english

File:

PDF, 276 KB

english, 1999

41

[IEEE 1995 International Conference on Power Electronics and Drive Systems. PEDS 95 - Singapore (21-24 Feb. 1995)] Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95 - A monolithic current limiting power MOSFET

Chong-Man Yun,, Doe-Young Kim,, Yearn-Ik Choi,, Min-Koo Han,

Year:

1995

Language:

english

File:

PDF, 282 KB

english, 1995

42

[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - Yokohama, Japan (23-25 May 1995)] Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 - The modified HSINFET using the trenched JBS injector

Han-Soo Kim,, Jae-Hyung Kim,, Byeong-Hoon Lee,, Min-Koo Han,, Seung Youp Han,, Yearn-Ik Choi,, Sang-Koo Chung,

Year:

1995

Language:

english

File:

PDF, 379 KB

english, 1995

43

[IEEE Eleventh International Vacuum Microelectronics Conference. IVMC'98 - Asheville, NC, USA (19-24 July 1998)] Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382) - Investigation of field emission characteristics for Si-base materials: titanium silicide, poly-Si, and single crystal Si

Moo-Sup Lim,, Cheol-Min Park,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1998

Language:

english

File:

PDF, 287 KB

english, 1998

44

[IEEE Eleventh International Vacuum Microelectronics Conference. IVMC'98 - Asheville, NC, USA (19-24 July 1998)] Eleventh International Vacuum Microelectronics Conference. IVMC'98 (Cat. No.98TH8382) - Undoped poly-Si tip lateral field emitter arrays with stable anode current by self-current limiting

Moo-Sup Lim,, Cheol-Min Park,, Min-Koo Han,, Yearn-Ik Choi,

Year:

1998

Language:

english

File:

PDF, 279 KB

english, 1998

45

[IEEE 1995 International Conference on Power Electronics and Drive Systems. PEDS 95 - Singapore (21-24 Feb. 1995)] Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95 - A lateral MOS controlled thyristor with shorted anode structure

Seong-Dong Kim,, Han-Soo Kim,, Yearn-Ik Choi,, Byung-Ha Kim,, Min-Koo Han,

Year:

1995

Language:

english

File:

PDF, 366 KB

english, 1995

46

[IEEE 14th International Symposium on Power Semiconductor Devices and ICs - Sante Fe, NM, USA (4-7 June 2002)] Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics - A new lateral conductivity modulated thyristor with current saturation and low turn-off time

You-Sang Lee,, Soo-Seung Kim,, Jae-Keun Oh,, Yearn-Ik Choi,, Min-Koo Han,

Year:

2000

Language:

english

File:

PDF, 371 KB

english, 2000

47

A power MOSFET design methodology considering epi parameter variations

Seong-Kyu Hwang,, Yearn-Ik Choi,, Sang-Koo Chung,, Lee, K., Choong-Ki Kim,

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

1993

Language:

english

File:

PDF, 448 KB

english, 1993

48

A new lateral anode switched thyristor (LAST) with current saturation and low turn-off time

You-Sang Lee,, Soo-Seong Kim,, Jae-Keun Oh,, Yearn-Ik Choi,, Min-Koo Han,

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 212 KB

english, 2002

49

Observation of Resonances by Individual Energy Levels in InGaAs/AlAs Triple-Barrier Resonant Tunneling Diodes

Jo, Jungyol, Choi, Yearn-Ik, Kim, Dong Myong, Alt, Kevin, Wang, Kang L.

Journal:

Japanese Journal of Applied Physics

Year:

1998

File:

PDF, 460 KB

1998

50

The Novel Junction Termination Method Employing Shallow Trench

Ha, Min-Woo, Oh, Jae-Keun, Kim, Soo-Seong, Han, Min-Koo, Choi, Yearn-Ik

Journal:

Physica Scripta

Year:

2004

Language:

english

File:

PDF, 249 KB

english, 2004